TQP0104 Datasheet, PDF (1/12 Pages) TriQuint Semiconductor – 30 W, DC to 4 GHz, GaN Power Transistor

Applications
• W-CDMA / LTE
• Macrocell Base Station Driver
• Microcell Base Station
• Small Cell Final Stage
• Active Antenna
• General Purpose Applications
Product Features
• Operating Frequency Range: DC to 4 GHz
• Output Power (PSAT): 30 W
• Drain Efficiency: 64%
• Linear Gain: 17 dB
• Package Dimensions: 3 x 4 x 0.85 mm
TQP0104
30 W, DC to 4 GHz, GaN Power Transistor
20 Pin 3x4mm QFN
Functional Block Diagram
V_G, RF In 1
V_G, RF In 2
V_G, RF In 3
V_G, RF In 4
V_G, RF In 5
V_G, RF In 6
20 19 18 17
16 VD, RF Out
15 V_D, RF Out
14 VD, RF Out
13 VD, RF Out
12 VD, RF Out
11 VD, RF Out
7
8
9
10
General Description
The TQP0104 is a wide band over-molded QFN discrete
GaN power amplifier. The device is a single stage
unmatched power amplifier transistor.
The TQP0104 can be used in Doherty architecture for
the final stage of a base station power amplifier for small
cell, microcell, and active antenna systems. The
TQP0104 can also be used as a driver in a macrocell
base station power amplifier.
Pin Configuration
Pin No.
1-6
7-10, 17-20
11-16
Backside Paddle
Label
RF IN, VG
N/C
RF OUT, VD
RF/DC GND
The wide bandwidth of the TQP0104 makes it suitable
for many different applications from DC to 4 GHz.
TQP0104 can deliver PSAT of 30 W at 28 to 32 V
operation.
Lead-free and ROHS compliant.
Ordering Information
Part No.
TQP0104
ECCN Description
EAR99 30 W, DC to 4 GHz, GaN PA
TQP0104-2.6-EVB EAR99 2.5-2.7 GHz Eval Board
TQP0104-2.1-DOH EAR99 2.1 GHz Doherty Eval Board
Preliminary Datasheet: Rev F 09-28-15
© 2014 TriQuint
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