TQP0103 Datasheet, PDF (1/10 Pages) TriQuint Semiconductor – 15 W, DC to 4 GHz, GaN Power Transistor

Applications
 W-CDMA / LTE
 Macrocell Base Station Driver
 Microcell Base Station
 Small Cell
 Active Antenna
 General Purpose Applications
Product Features
 Operating Frequency Range: DC to 4 GHz
 Output Power (PSAT): 15 W
 Drain Efficiency: 64%
 Linear Gain: 19 dB
 Package Dimensions: 3 x 4 x 0.85 mm
TQP0103
15 W, DC to 4 GHz, GaN Power Transistor
20 Pin 3x4mm QFN
Functional Block Diagram
General Description
The TQP0103 is a wide band over-molded QFN discrete
power amplifier. The device is a single stage unmatched
power amplifier transistor.
The TQP0103 can be used in Doherty architecture for the
final stage of a base station power amplifier for small cell,
microcell, and active antenna systems. The TQP0103 can
also be used as a driver in a macrocell base station power
amplifier.
The wide bandwidth of the TQP0103 makes it suitable for
many difference applications from DC to 4 GHz. TQP0103
can deliver PSAT of 15 W at 28 to 32 V operation.
Lead-free and ROHS compliant.
Pin Configuration
Pin No.
1-2, 5-11, 16-20
3-4
12-15
Backside Paddle
Label
N/C
RF IN, VG
RF OUT, VD
RF/DC GND
Ordering Information
Part No.
TQP0103
ECCN Description
EAR99 15 W, DC to 4 GHz, GaN PA
TQP0103-PCB EAR99 2.5-2.7 GHz Evaluation Board
Preliminary Datasheet: Rev D 09-30-15
© 2014 TriQuint
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