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TQM7M6025_15 Datasheet, PDF (1/1 Pages) TriQuint Semiconductor – 2-in-1 Power Amplifier Module | |||
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TQM7M6025
2-in-1 Power Amplifier Module
Applications
ï· BC0â/âBC1 CDMAâ/âEVDO Handsetsâ/âData cards
ï· Bands 2 & 5 WCDMA Handsetsâ/âData Cards
ï· HSDPAâ/âHSUPAâ/âHSPA+
Product Features
ï· Integrated high efficiency dual-band two gain state
power amplifier, VREG circuitry, input band select
switch and directional coupler
ï· Multi-Band coverage
o High Band 2, 25, BC1 (1850âââ1915âMHz)
o Low Band 5, 26, BC0 (814âââ849âMHz)
ï· Small Size = 4.0âmmâxâ3.0âmm
ï· Low Quiescent Current in LPM
ï· High Max Power PAE
ï· No External Voltage Regulation Required
ï· APT (Average Power Tracking) Capable
General Description
The TQM7M6025 PA Module integrates two high
efficiency BiHEMT power amplifiers, input band select
switch, directional coupler and Vreg circuitry into a
compact 4.0 mm x 3.0 mm package. TriQuintâs CuFlip®
assembly technology and BiHEMT GaAs process
provides a compact, low cost solution optimized for the
Qualcomm WTR2605 transceiver with state-of-the-art
HPM PAE.
The TQM7M6025 is a power amplifier module for bands
2, 25 & 5, 26 for use with WCDMA and BC0 and BC1 for
CDMA modulations. As a result of the combination of
high performance, low cost and small size it is well
suited for both mobile handset and data card
applications.
Functional Block Diagram
Vbatt
RFin
VenHB
VenLB
Vmode
GND
RFout_HB
GND
Vcc
GND
RFout_LB
GND
Electrical Specifications
Parameter
Band 2 Band 5
HPM POUT
+28.6 +28.0
ACLR (5âMHz offset)
â40
â40
ACLR (10âMHz offset) â50
â50
HPM Pmax PAE *
45
45
Rx Noise
â136
â135
HPM Gain
27
27
Typical performance for WCDMA Rel99,
VCC=+3.4âVDC, VEN=HIGH, TC=25â°C.
* PAE measured at required Vcc for Rel99
ACLR1ââ¤â40âdBc.
Units
dBm
dBc
dBc
%
dBm/Hz
dB
Datasheet: Rev. L 01-05-15
© 2014 TriQuint
Ordering Information
Part No.
Description
TQM7M6025
2 in 1 Power Amplifier Module
Standard T/R size = 2500 pieces on a 13â reel
- 1 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
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