TQM7M6001 Datasheet, PDF (1/9 Pages) TriQuint Semiconductor – Precision, 100UA Gain Selectable Amplifier

TQM7M6001
Advance Data Sheet
3V IMT2100 WCDMA Power Amplifier Module
Functional Block Diagram
Features
VCC1
RFIN
GND
VMODE
VREF
Match
Bias Control
VCC2
GND
RFOUT
GND
GND
Product Description
Advanced compact 3V linear power amplifier module designed for mobile UMTS
handset applications in IMT2100 band. The small size and high performance is
achieved with high-reliability InGaP HBT technology. The module is fully
integrated, providing a simple 50 Ohms interface on input and output ports. No
external matching or bias components are required. Despite its very compact size,
the module has exceptional efficiency and linearity. The module provides high/low
output power modes and supports low power mode operation at reduced supply
voltage.
Electrical Specifications
Parameter
Frequency
Pout high mode¹
PAE high mode ¹
Pout low mode ²
PAE low mode ²
ACPR 5MHz^1,2
ACPR 10MHz^1,2
IMT2100 band
Min.
Typ.
Max.
1920
1980
27.5
40
16
20
-40
-50
Unit
MHz
dBm
%
dBm
%
dBc
dBc
Note 1: Test Conditions CDMA High Mode: VCC1=3.4VDC, VCC2=3.4VDC, VREF =2.85VDC,
VMODE=low, Tc=25°C, ZS=ZL=50 Ohm, Pout = 27.5dBm
Note 2: Test Conditions CDMA Low Mode: VCC1=3.4VDC, VCC2=1.2VDC, VREF =2.85VDC,
VMODE=high, Tc=25°C, ZS=ZL=50 Ohm, Pout = 16dBm
Advance Data Sheet: Subject to change without notice
For additional information and latest specifications, see our website: www.triquint.com
Revision B, January 20, 2005
• Very compact size – 4 x 4 x 1.1mm³
• For 3G UMTS designs in IMT2100 band
• High/low output power modes
• High efficiency – high mode 40% typical
• Supports low collector voltage operation
• Low Vref of 2.85V nominal
• 10 pin package
• Positive supply voltage – 3.2 to 4.2 V
• 50 Ω input and output impedances
• High-reliability InGaP technology
Applications
• For 3G WCDMA designs in IMT2100 band
Package Style
4mm x 4mm LGA package (dimensions in mm):
1