TQM7M5013 Datasheet, PDF (1/1 Pages) TriQuint Semiconductor – Quad-Band GSM850/GSM900/DCS/PCS Advanced Input Power Controlled EDGE PAM

TQM7M5013
Data Sheet
Quad-Band GSM850/GSM900/DCS/PCS Advanced Input Power Controlled EDGE PAM
Functional Block Diagram
RF_in_DCS
Vbatt
HBEn
Vmode0
Vmode1
LBEn
GND
RF_in_GSM
CONTROL CIRCUIT
RF_out_DCS
Vcc
RF_out_GSM
Product Description
The TQM7M5013 is an input power controlled, multiple gain state, quad band,
GSM/EDGE PAM designed for use with the Qualcomm QTR/RTR8600 WEDGE
solutions. This highly efficient PAM significantly improves talk-time while still
providing an easy to use solution in a small form factor. The PA output power is
controlled by the input power coming from the transceiver in both GMSK and 8PSK
modes and so does not require a Vramp input. Additionally, the small 5mm x 5mm
package requires minimum board space and allows for high levels of phone
integration.
Features
 For Quad Band GSM/EDGE
 Digital Control Interface
 Low Current at Backed-off Power Levels
 Input power controlled – GMSK and 8PSK
 LB has 4 modes – HP, MP, LP, and ULP
 HB has 3 modes – HP, LP, and ULP
 HBT/PHEMT High Efficient Technology
 High–Power Linearity
 Standard LB and HB paths
 50Ω input and Output Impedance
 Halogen-free
 11 Pin Package
Applications
 GSM/EDGE/WEDGE Handsets
 GSM/EDGE/WEDGE Wireless Cards
Electrical Specifications¹
Package Style
Parameter
GMSK HPM Pout
GMSK MPM Pout
8PSK (RMS Power)
GMSK LPM Pout
GMSK ULPM Pout
GMSK HPM PAE
GMSK MPM PAE
GMSK LPM PAE
GMSK ULPM PAE
GSM850 GSM900 DCS
Typ
Typ
Typ
35.3
35
33.3
31.8
32.2
-
29
29
28
22
22
22.8
20.5
21
21.5
52
55
55
43
45
-
27
31
25
29
32
23
PCS Units
Typ
33
dBm
-
dBm
28
dBm
22
dBm
20
dBm
52
%
-
%
19
%
16
%
Note 1: RF performance measured at standard operating conditions.
Data Sheet
1
For additional information and the latest specifications, see our website: www.triquint.com
Revision P, August 31, 2011