TQM7M5012 Datasheet, PDF (1/1 Pages) TriQuint Semiconductor – 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module

TQM7M5012
Advanced Data Sheet
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
Functional Block Diagram
Features
• Ultra-small 5x5mm form factor
• GSM/EDGE Multi-Mode Capability
• - 90 dBm Typical Rx Noise
• - 38 dB Typical ACPR (200KHz)
• - 66 dB Typical ACPR (400 KHz)
• - 76 dB Typical ACPR (600 KHz)
• 1% Typical EVM rms
• > 50 dB Typical Dynamic Range
• GPRS Class 12
• Internally Matched Input and Output
• RoHS, MSL260C pending
Product Description
The TQM7M5012 is a ultra-small (5x5mm), GSM/EDGE Polar PAM
for handset applications. This module has been optimized for
excellent EDGE efficiency, Rx band noise performance, ACPR and
EVM in an open loop polar modulation environment at EDGE class
E2+ operation while maintaining high GSM/GPRS efficiency.
High reliability is assured by utilizing TriQuint’s 3rd generation
InGaP HBT technology and by TriQuint’s proven module design
techniques. The low profile, ultra-small package is enabled via
TriQuint’s CuFlip^TM technology.
Applications
• GSM/EDGE/WEDGE Handsets
• GSM/EDGE/WEDGE Wireless Cards
Package Style
Top View
Electrical Specifications
850 Band 900 Band DCS Band PCS Band Units
Parameter
Typ
Typ
Typ
Typ
GSM Pout ₃₅
34.7
33
32.5
dBm
Efficiency 53
55
49
50
%
Pin
6
6
6
6
dBm
EDGE Pout ₂₉
29
28
28
dBm
Efficiency 25
25
25
26
%
Pin
6
6
6
6
dBm
Package Size: LGA 5 x 5 x 1 mm
Advanced Data Sheet: Subject to change without notice
1
For additional information and latest specifications, see our website: www.triquint.com
Revision H, January 25, 2008