TQM7M5004 Datasheet, PDF (1/1 Pages) TriQuint Semiconductor – GSM/EDGE Multi-mode Power Amplifier Module

TQM 7M5004
Preliminary Data Sheet
GSM/EDGE Multi-mode Power Amplifier Module
Functional Block Diagram
Features
DCS / PCS in
Band Select
TX_EN
VBATT
Mode Select
VRAMP
Vbias (digital)
GSM 850 / 900 IN
Logic
Power Control
DCS / PCS Out
VCC
GSM 850 / 900 Out
Product Description
The TQM 7M5004 is an extremely small (7x7x1.1mm³) multi-mode power amplifier
module for GSM/EDGE applications. This module has been optimized for high EDGE
efficiency and EDGE power class E2 operation while maintaining high GSM/GPRS
efficiency. Two EDGE quiescent current states are provided to minimize current
consumption during backed-off power settings.
The module incorporates two highly-integrated InGaP power amplifier die with a CMOS
controller. The CMOS controller implements a fully integrated closed-loop power
control within the module for GSM Operation. This eliminates the need for any external
couplers, power detectors, current sensing etc., to assure the output power level. The
latter is set directly from the Vramp input from the DAC. The module has Tx enable,
band select, mode (EDGE or GSM) inputs. Module construction is a low-profile over-
molded land-grid array on laminate.
Electrical Specifications (Nominal)
Parameter
850 Band
Min Typ Max
GSM Pout _{34.5 35.5}
900 Band
Min Typ Max
34.5 35.5
DCS / PCS
Units
Min Typ Max
32.0 33
dBm
Efficiency 43 50
45 52
40/45 46/50
%
Pin 0
2
4
0
2
4
0
2 4 dBm
EDGE Pout _{28.5 29}
28.5 29
28 28.5
dBm
Efficiency 20 23
20 23
20 25
%
Gain 29 30.5 32.0 30.0 31.5 33.0 37/36 38/37 40/39 dB
ACPR
(400KHz)
-62 -58
-62 -58
-62 -58 dBc
• Very compact size – 7×7×1.1 mm³.
• High GSM efficiency – GSM 850 50%,
GSM900 52%, DCS 46%, PCS 50%
• High EDGE efficiency – GSM 850 23%, GSM
900 23%, DCS 25%, PCS 25%
• Low Quiescent Current Mode for EDGE
Pout <= 18.5dBm (low-band) & <= 18dBm
(high-band)
• Positive supply voltage – 3.0 to 4.5 V
• 50 Ω input and output impedances.
• GPRS class 12.
• CMOS band select and internal closed-loop
power control for GSM Operation.
• High-reliability InGaP technology.
• Ruggedness 10:1
• No external Vref Required
Applications
• GSM/EDGE handsets
• GSM/EDGE wireless cards & data links
Package Style
Package Size: LGA 7 x 7 x 1.1 mm
RF_in_DCS
Ground
BS
Tx_En
Vbatt
Gnd
Top View
Ground
RF_out_DCS
Ground
Vcc
Mode
Vramp
Vbias
(digital)
RF_in_GSM
Gnd
Ground
RF_out_GSM
Preliminary Data Sheet: Subject to change without notice
1
For additional information and latest specifications, see our website: www.triquint.com
Revision J, April 20, 2006