TQM7M4007_15 Datasheet, PDF (1/1 Pages) TriQuint Semiconductor – 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module

TQM7M4007
Data Sheet
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
Functional Block Diagram
Features
Product Description
The TQM7M4007 is an extremely small (5x5x1.0mm³) multi-mode power amplifier
module for GSM/GPRS applications. This module has been optimized for high
GSM/GPRS efficiency.
The module incorporates two highly integrated InGaP power amplifier die with a
CMOS controller. The CMOS controller implements a fully integrated closed-loop
power control within the module for GSM Operation. This eliminates the need for
any external couplers, power detectors, current sensing etc., to assure the output
power level. The latter is set directly from the Vramp input from the DAC. The
module has Tx enable and band select. Module construction is a low-profile over-
molded land-grid array on a halogen free laminate.
• Very compact size – 5×5×1.0 mm³.
• High GSM efficiency – GSM 850 55%,
GSM900 55%, DCS 50%, PCS 49%
• Positive supply voltage – 3.0 to 4.5 V
• 50 Ω input and output impedances
• GPRS class 12.
• CMOS band select and internal closed-loop
power control for GSM Operation.
• High-reliability InGaP technology.
• Ruggedness 10:1
• No external Vref Required
Applications
• GSM/GPRS handsets
• GSM/GPRS wireless cards & data links
Package Style
Package Size: LGA 5 x 5 x 1.0 mm
Electrical Specifications
Parameter
GSM Pout
Efficiency
Pin
850 Band
Typ
35
55
3
900 Band
Typ
35
55
3
DCS Band
Typ
33
50
3
PCS Band Units
Typ
33 dBm
49
%
3
dBm
Data Sheet: Subject to change without notice
1
For additional information and latest specifications, see our website: www.triquint.com
Revision K, April 7, 2010