TQM7M4006 Datasheet, PDF (1/13 Pages) TriQuint Semiconductor – 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module

TQM7M4006
DATASHEET
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
Functional Block Diagram
DCS / PCS in
Band Select
TX_EN
VBATT
VRAMP
GSM 850 / 900 IN
Logic
Power Control
DCS / PCS Out
VCC
GSM 850 / 900 Out
Product Description
The TQM7M4006 is an advanced, quad-band, ultra-compact, 3V power amplifier
module designed for mobile handset applications. The module sets new
standards in performance and size by employing the latest technologies in HBT
power amplifier design, laminate design and CuFlip™ assembly technology. High-
reliability is assured by InGaP HBT technology. This fully integrated module, in a
minimal form factor, provides a simple 50 Ω interface on all input and output ports.
It includes internal power control with wide dynamic range, and on-board
reference voltage. No external matching or bias components are required.
Despite its very compact size, the module has exceptional efficiency in all bands.
Incorporates two highly-integrated InGaP power amplifier die, a GaAs high Q
passive matching die with a CMOS controller. All die are CuFlip™ mounted to
minimize thermal excursions. Each amplifier has three gain stages with interstage
matching implemented with a high Q passives technology for optimal
performance. The CMOS controller implements a fully integrated power control
circuit within the module, eliminating the need for external detection to assure the
output power level. The latter is set directly from the Vramp input from the DAC. The
module has Tx enable and band select inputs and a highly-stable on-board
reference voltage. Excellent performance is achieved across the 824 – 849 MHz,
880 – 915 MHz, 1710 – 1785 MHz, and 1850 – 1910 MHz bands. Module
construction is a low-profile overmolded land-grid array on laminate.
Electrical Specifications
Parameter
850 Band
900 Band
DCS / PCS Band
Units
Min Typ Max Min Typ Max Min Typ Max
GSM Pout 34.2 35
34.2 35
32.5/32 33/32.5
dBm
Efficiency 44 52
50 57
44/44 51/51
%
Pin 1.5 5
8 1.5 5 8 1.5
5
8 dBm
Features
• Very compact size – 5×5×1.1 mm³.
• Positive supply voltage – 3.0 to 4.5 V.
• High efficiency – typical GSM850 52%,
GSM900 57%, DCS 51%, PCS 51%.
• CMOS internal closed-loop power control.
• >55 dB dynamic control range.
• GPRS class 12 compatible.
• High-reliability InGaP technology.
• Ruggedness 10:1.
• 50 Ω input and output impedances.
• Few external components
Applications
• GSM handsets
• GSM wireless cards and data links
Package Style
Package Size: LGA 5 x 5 x 1.1 mm³
RF_in_DCS
Top View
Vcc2D
BS
Tx_En
Vbatt
Vramp
RF_out_DCS
Gnd
Vcc3
RF_out_GSM
RF_in_GSM
Vcc2G
All specifications subject to change without notice
2
For additional information and latest specifications, see our website: www.triquint.com
February 22, 2006 (Rev. E)