TQM7136 Datasheet, PDF (1/16 Pages) TriQuint Semiconductor – 3V HBT SiGe CDMA POWER AMPLIFIER MODULE

Preliminary: Subject to
change without notice
WIRELESS COMMUNICATIONS DIVISION
V_CC1
V_CTRL1
GND
Bias Control
RF_IN
Match
Match
RF_OUT
TQM7136
DATA SHEET
3V HBT SiGe CDMA POWER
AMPLIFIER MODULE
V_REF
V_CTRL2
V_CC2
Product Description:
The TQM7136 is a 3V, 2 stage SiGe HBT Power Amplifier Module designed for use in
mobile phones. Its RF performance meets the requirements for products designed to
IS-95/98 standards. The quiescent current of the TQM7136 is set by the base-band
processor using two CMOS compatible ICQ control voltages (VCTRL1 and VCTRL2).
Overall current consumption of the device is minimized by selecting the lowest ICQ state
available for each power output level. RF input and output matching is included within
the module; therefore, minimal external circuitry is required.
The TQM7136 gives excellent RF performance with low current consumption resulting
in longer talk times in portable applications. The small 6mm square surface mount
package is ideal for new generation small and light phones.
Electrical Specifications:
Parameter
Frequency
Min
Typ
Max
Units
824
849
MHz
CDMA mode Pout¹
28
dBm
CDMA Mode Efficiency¹
36
%
AMPS Mode Output Power²
31.5
dBm
AMPS Mode Efficiency²
51
%
Note 1: Test Conditions CDMA Mode: VCC1=3.4VDC, VCC2=3.4VDC, VREF =2.85VDC, VCTRL1=1.7VDC,
VCTRL2 =1.7VDC, Tc=25°C, Pout = 28.0dBm
Note 2: Test Conditions AMPS Mode: VCC1=3.4VDC, VCC2=3.4VDC, VREF=2.85VDC, VCTRL1=1.7VDC,
VCTRL2=1.7VDC, Tc=25°C, Pout=31.5dBm
Features
§ High Efficiency
§ Three quiescent current states
§ CMOS compatible logic inputs
§ Excellent ACP and ALT
§ Small 8 pin 6x6mm module
§ Internally matched input and output
§ Full ESD Protection
§ Low leakage current
Applications
§ Cellular Band CDMA IS-95/98 based mobile
phones.
§ Single-Mode, Dual Mode, and Tri Mode
CDMA/AMPS phones
For additional information and latest specifications, see our website: www.triquint.com
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