TQM713019 Datasheet, PDF (1/15 Pages) TriQuint Semiconductor – 3V HBT GaAs CDMA 4x4mm Power Amplifier Module

TQM713019
Data Sheet
3V HBT GaAs CDMA 4x4mm Power Amplifier Module
Functional Block Diagram
Vref 1
Vmode 2
GND 3
1 Bit Bias Control
RFin ⁴
Vcc1 5
10 GND
9 GND
8 _RFout
7 _GND
6 Vcc2
Product Description
The TQM713019 is a 3V, 2 stage GaAs HBT Power Amplifier Module designed for
use in mobile phones. Its extremely small 4x4mm package makes it ideal for
today’s compact data enabled phones. Its RF performance meets the
requirements for products designed to IS-95/98 standards.
The TQM713019 is designed on TriQuint’s advanced InGaP HBT GaAs
technology offering state of the art reliability, temperature stability, and
ruggedness. Selectable bias mode and a shutdown mode with low leakage
current improves talk and standby time. The output match, realized within the
module package, optimizes efficiency/linearity at maximum rated output power.
The module is a 4x4mm land grid array with backside ground. The TQM713019 is
footprint compatible with industry standard 4x4mm CDMA PA modules.
Electrical Specifications
Features
• InGaP HBT Technology
• High Efficiency: 41% CDMA
• Low Leakage Current: < 1uA
• Low Icq = 55mA
• Supports new chipsets with Vref @ 2.6V
• Capable of running as 0-bit PA in low bias
mode to 28dBm
• Optimized for 50Ω system
• Small 10 pin 4x4mm module
• Excellent Rx band noise performance
• CDMA 1XRTT, 1XEV-DO compliant
• Full ESD protection
Applications
• IS-95 / CDMA2000
• Single mode, dual mode, and tri mode
CDMA/AMPS phones
Package Style
4mm x 4mm LGA package
Parameter
Min
Frequency
824
CDMA mode maximum Pout¹
Gain
CDMA ACPR
CDMA ALTR
Power Supply Current @ 28dBm
IREF
Rx Band Noise
Typ Max
849
28
29
50
65
450
2.0
-140
Units
MHz
dBm
dB
dBc
dBc
mA
mA
dBm/Hz
Note 1 : CDMA Mode: VCC1=3.4VDC, VCC2=3.4VDC, VREF =2.85VDC, Tc=25°C
Data Sheet: Subject to change without notice
1
For additional information and latest specifications, see our website: www.triquint.com
Rev. D, March 2005