TQHIP Datasheet, PDF (1/4 Pages) TriQuint Semiconductor – Precision, 100UA Gain Selectable Amplifier

Production Process
TQHiP
Power MESFET Foundry Service
Air Bridge - 4um
Metal 1 – 2 um
N+
N+
N-/P- Channel
D MESFET
Metal 1
MIM Metal
Metal 0
NiCr
Isolation Implant
MIM Capacitor
NiCr Resistor
Semi-Insulating GaAs Substrate
TQHiP Process Cross-Section
General Description
TriQuint’s TQHiP process is our robust, high power density
MESFET process. It provides a straight-forward, low cost
process for a variety of circuits and applications. Its high oper-
ating and breakdown voltages make it ideal for wireless or
wired infrastructure applications. A thick (4 µm) gold airbridge
complements the 2 µm thick gold global metal and 0.5 µm
thick gold surface layer for wiring flexibility and interconnect
density. Precision NiCr resistors and high value MIM capaci-
tors are included.
Features
• Power MESFET Process
• Interconnects:
• 2 Global (one airbridge)
• 1 Local
• High-Q Passives
• Bulk & Thin Film Resistors
• Backside Vias Optional
• High Volume Production
Processes
• Validated Models and
Design Support
Applications
• Power Amplifiers
• Switches
• Frequencies thru X-Band
• Base Station Driver
Amplifiers
• CATV Line Amplifiers
• Cellular Power Amps, Driv-
ers, Switches
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Semiconductors for Communications
www.triquint.com
Page 1 of 4; Rev 2.1 4/30/02
Phone: [phone]
Fax: [phone]
Email: [e-mail]