TQHBT Datasheet, PDF (1/5 Pages) TriQuint Semiconductor – Precision, 100UA Gain Selectable Amplifier

Production Process
TQHBT
InGaP HBT Foundry Service
Metal 2 - 4um
Dielectric
Metal 1 - 2um
Metal 1 - 2um
E
B
Emitter B
Base
C
Collector
Sub Collector
Dielectric
C
Buffer & Substrate
NiCr
MIM
Metal 0
Isolation Implant
TQHBT Process Cross-Section
General Description
TriQuint’s TQHBT process is a highly reliable InGaP HBT
process with three levels of interconnecting metal. Thick
metal interconnects and high quality passives promote inte-
gration. The thick metal interconnects, which promote en-
hanced thermal management, and high density capacitors
keep die sizes small. MOCVD epitaxial processes are utilized
to grow the active layers. A carbon-doped Base and InGaP
Emitter are utilized for high RF performance consistent with
high reliability. Precision NiCr resistors and high value MIM
capacitors are included. The three metal layers are encapsu-
lated in a high performance dielectric that allows wiring flexi-
bility and plastic packaging simplicity.
Features
• InGaP Emitter Process for High
Reliability and Thermal Stability
• Base Etch Stop for Uniformity
• MOCVD Epitaxy
• High Linearity in PA applications
• High Density Interconnects;
• 2 Global, 1 Local
• Over 6 µm Total Thickness
• Dielectric Encapsulated Metals
• Thick Metal Interconnects:
• Enhanced Thermal Management
• Minimum Die Size
• Effective Base Ballasting for
Maximum Gain
• 150 mm Wafers
• High-Q Passives
• NiCr Thin Film Resistors
• High Value Capacitors
• Backside Vias Optional
• Validated Models and Design
Support
Applications
• Power Amplifiers
• Driver Amplifiers
• Wideband, General Purpose
Amplifiers
• Gilbert Cell Mixers
• VCOs
• Single Supply and Easy Biasing
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Semiconductors for Communications
www.triquint.com
Page 1 of 5; Rev 2.1 8/10/02
Phone: [phone]
Fax: [phone]
Email: [e-mail]