TQ9147B Datasheet, PDF (1/10 Pages) TriQuint Semiconductor – 2-Stage AMPS Power Amplifier IC

WIRELESS COMMUNICATIONS DIVISION
RF_{OUT 1}
GND 2
GND ³
GND 4
GND ⁵
RF_IN ⁶
GND ⁷
V_G1 8
16 ^RFOUT
15 _GND
14 _GND
13 GND
12 ^GND
11 V_G2
10 _GND
9 V_D1
Product Description
The TQ9147 is a high efficiency two stage GaAs MESFET power amplifier IC
intended for use in AMPS (IS-19) applications that operate in the US Cellular (824 -
849 MHz) band. The TQ9147 requires minimal external RF circuitry and operates
from a 4.8-Volt supply. With its flexible, off-chip, single component output matching
circuit, the TQ9147 is suitable for use in other applications near the cellular band,
such as 900 MHz ISM applications.
The TQ9147 utilizes a space saving SO-16 plastic package that minimizes board
area and cost.
TQ9147B
DATA SHEET
2-Stage AMPS
Power Amplifier IC
Features
§High Efficiency
§+32 dBm Output Power
§50Ω Matched Input
§SO-16 Plastic Package
§Monolithic Power Amp
Applications
§AMPS Mobile Phones
§CDPD Modems
§General ISM Band Applications
Electrical Specifications¹
Parameter
Output Power
Efficiency
Min
Typ
Max
+31.5 +32
55
60
Units
dBm
%
Note 1: Test Conditions: VDD = 4.8 V, PIN = +7 dBm, Freq. = 824 & 849 MHz, TC = 25°C,
Min/max values 100% production tested.
Electrical Characteristics
For additional information and latest specifications, see our website: www.triquint.com
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