TQ7625 Datasheet, PDF (1/1 Pages) TriQuint Semiconductor – 3V HBT TDMA Power Amplifier IC

Advance Product Information
WIRELESS COMMUNICATIONS DIVISION
Preliminary: Subject to change without notice
3V HBT TDMA Power Amplifier IC
TQ7625
Selected Electrical Characteristics
Test Conditions: V_CC = +3.5 V, T_C = 25°C, V_BIAS=2.75V
Parameter
Min. Typ. Max.
Usable Frequency Range
1850
1910
Units
MHz
Primary Application(s)
• IS-136 Mobile Phones
TDMA Output Power
28
dBm
• Dual Band Mobile phones
TDMA Power Added Efficiency
40
%
ACP, Pout = +28 dBm
ALT, Pout = +28 dBm
Large Signal Gain
Small Signal Gain (Vmode=low)
-30
dBc
Key Features
-53
dBc
27.5
dB
• High Efficiency
26
dB
• Low Quiescent Current,
Receive Band Noise
-92
dBm/30KHz
Mode Selectable
Quiescent Current, Vmode= low
60
mA
uses Vmode
Vmode= high
80
mA
Switching
Vmode, Externally
POUT <=+15dBm
0
0
0.3
V
Switched.
POUT =+28dBm
2.65 2.75 2.85
V
• Small size 3x3 mm leadless package
• Few external components
• Excellent ACP Performance
• Single +2.7V Supply
Second Harmonic, POUT =+28dBm
-45
dBc
Third Harmonic, POUT =+28dBm
-55
dBc
Application Circuit, US PCS Band
VCC 2
V CC 1
RF Input
50 OhmLine
V REG
V _bias
V_{CC1 GND GND GND}
GND
RF_OUT
RFIN
GND
TQ7625
RF_OUT
RF_OUT
V
REG
V_bias
RF_OUT
V_{mode Bypass} GND
50 Ohm
V _mode
RF Output
Package: 3x3 mm
Leadless 16 pin
3.0 mm
16
15
14
13
1
12
2
11
GND
3
10
4
9
5
6
7
8
TQS Wireless Communications
2300 NE Brookwood Parkway
Hillsboro, OR 97124
[phone]
FAX:[phone]
05/17/01 REV. 4