TQ7125 Datasheet, PDF (1/1 Pages) TriQuint Semiconductor – 3V HBT TDMA Power Amplifier IC

Advance Product Information
WIRELESS COMMUNICATIONS DIVISION
Preliminary: Subject to change without notice
3V HBT TDMA Power Amplifier IC
TQ7125
Selected Electrical Characteristics
Test Conditions: V_CC = +3.5 V, T_C = 25°C, V_bias=2.75V
Parameter
Min. Typ. Max.
Usable Frequency Range
824
849
Units
MHz
Primary Application(s)
• IS-136 Mobile Phones
TDMA Output Power
29.5
dBm
• AMPS Mobile phones
TDMA Power Added Efficiency
ACP, Pout = +29.5 dBm
ALT, Pout = +29.5dBm
47
%
• Dual Mode Mobile phones
-30
dBc
• CDPD Modems
-52
dBc
Large Signal Gain
Small Signal Gain
27
dB
26.5
dB
Key Features
Receive Band Noise
-92
dBm/30KHz
• High Efficiency
Quiescent Current, AMPS Mode
55
mA
uses Vmode
TDMA Mode
70
mA
Switching
Vmode, Externally
AMPS Mode
0
0
0.3
V
Switched.
TDMA Mode
2.4
2.7
3.0
V
• Low Quiescent Current,
Mode Selectable
• Small size: 3x3 mm leadless package
• Few external components
Second Harmonic, POUT =+29.5 dBm
Third Harmonic, POUT =+29.5 dBm
AMPS Output Power
-30
-40
29.5
dB
• Excellent ACP Performance
dB
• Single +2.7V Supply
dBm
AMPS Power Added Efficiency
47
%
Application Circuit, US Cellular Band
VCC 2
Package: 3x3 mm
Leadless 16 pin
V CC 1
3.0 mm
RF Input
50 OhmLine
V REG
V _bias
V _mode
V_{CC1 GND GND GND}
GND
RF_OUT
RFIN
GND
TQ7125
RF_OUT
RF_OUT
V
REG
V_bias
RF_OUT
V_{mode Bypass} GND
Open
50 Ohm
RF Output
16
15
14
13
1
12
2
11
GND
3
10
4
9
5
6
7
8
TQS Wireless Communications
2300 NE Brookwood Parkway
Hillsboro, OR 97124
[phone]
FAX:[phone]
05/14/01 REV. 4