TGS2306-EPU Datasheet, PDF (1/8 Pages) TriQuint Semiconductor – High Power DC - 18GHz SPDT FET Switch

Advance Product Information
November 9, 2004
High Power DC - 18GHz SPDT FET Switch TGS2306-EPU
Key Features and Performance
• DC - 18 GHz Frequency Range
• 29 dBm Input P1dB @ V_C = -5V
• > 30 dB Isolation
• <1 nsec switching speed
• Control Voltage Application from
Either Side of MMIC
• -3V or -5V Control Voltage
• 0.5µm pHEMT 3MI Technology
• Chip Dimensions:
0.83 x 1.11 x 0.10 mm
(0.033 x 0.044 x 0.004 inches)
Preliminary Measured Performance
V_C1 = 0V; V_C2 = -5V
0
-2
-4
-6
-8
-10
0
S21
S11
S22
S13
24
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
6 8 10 12 14 16 18 20
Frequency (GHz)
Desription
The TriQuint TGS2306-EPU is a GaAs
single-pole, double-throw (SPDT) FET
monolithic switch designed to operate
over the DC to 18GHz frequency range.
This switch not only maintains a high
isolation loss and a low insertion loss
across a wide bandwidth, but also has
very low power consumption and high
power handling of 29dBm or greater
input P1dB at V_C = 5V. These
advantages, along with the small size of
the chip, make the TGS2306-EPU ideal
for use in high-speed radar and
communication applications.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
1
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