TGM2635-CP Datasheet, PDF (1/14 Pages) TriQuint Semiconductor – X-Band 100 W GaN Power Amplifier

Applications
• X-band Radar
• Satellite Communications
• Data Links
TGM2635-CP
X-Band 100 W GaN Power Amplifier
Product Features
• Frequency Range: 7.9 – 11 GHz
• PSAT: > 50 dBm (PIN = 28 dBm)
• PAE: > 35% (PIN = 28 dBm)
• Large Signal Gain: > 22 dB (PIN = 28 dBm)
• Small Signal Gain: > 26 dB
• Bias: VD = 28 V, IDQ = 1.3 A, VG = -2.6 V Typical
• Package Dimensions: 19.05 x 19.05 x 4.52 mm
• Performance Under Pulsed Operation
Functional Block Diagram
General Description
Qorvo’s TGM2635–CP is a packaged X-band, high
power amplifier fabricated on Qorvo’s production 0.25um
GaN on SiC process. The TGM2635–CP operates from
7.9 – 11 GHz and provides 100 W of saturated output
power with 22.5 dB of large signal gain and greater than
35 % power–added efficiency.
The TGM2635-CP is packaged in a 10-lead 19.05 x
19.05 mm bolt-down package with a pure Cu base for
superior thermal management. Both RF ports are
internally DC blocked and matched to 50 ohms allowing
for simple system integration.
The TGM2635-CP is ideally suited for both military and
commercial X–Band radar systems, satellite
communications systems, and data links.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2, 4, 7, 9
3
5
6
8
10
Symbol
VG1
GND
RF Input
VG2
VD2
RF Output
VD1
Ordering Information
Part
TGM2635-CP
ECCN
3A001.b.2.b
Description
X-band 100 W GaN
Power Amplifier
Datasheet: Rev - 11-30-15
© 2015 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com