TGF4350_15 Datasheet, PDF (1/5 Pages) TriQuint Semiconductor – 300um Discrete pHEMT

Product Data Sheet
August 5, 2008
300um Discrete pHEMT
TGF4350
Key Features and Performance
• 0.25um pHEMT Technology
• DC 22 GHz Frequency Range
• 1.2 dB NF, 14.5 dB Associated
Gain at 10 GHz, 3V Operation
• Floating Source Configuration
• Chip Dimensions 0.620 mm x
0.514 mm
Primary Applications
• Low Noise amplifiers
17
F = 10 GHz
Vd = 3 V
15 _{Iq = 15 mA}
13
11
9
7
5
3
1
-12
-8
-4
0
4
Input Power - dBm
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
5
10
15
20
25
30
35
Drain Current - mA
Note: Datasheet is subject to change without notice.
80
70
60
50
40
30
Pout (dBm)
Gain (dB)
PAE (%)
8
20
10
0
12
16 _{F = 10 GHz}
15
14
13
12
NF (dB) Vd = 3 V
NF (dB) Vd = 5 V
11
NF (dB) Vd = 8 V
10
Gain (dB) Vd = 3 V
Gain (dB) Vd = 5 V
9
Gain (dB) Vd = 8 V
8
7
6
40
45
50
TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com
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