TGF4350 Datasheet, PDF (1/5 Pages) TriQuint Semiconductor – 300um Discrete pHEMT

Advance Product Information
300um Discrete pHEMT TGF4350-EPU
Key Features and Performance
• 0.25um pHEMT Technology
• DC 22 GHz Frequency Range
• 1.2 dB NF, 14.5 dB Associated
Gain at 10 GHz, 3V Operation
• Floating Source Configuration
• Chip Dimensions 0.5080 mm x
0.4064 mm
Primary Applications
• Low Noise amplifiers
17
80
F = 10 GHz
Vd = 3 V
15 _{Iq = 15 mA}
70
13
60
11
50
9
40
7
30
5
3
1
-12
-8
-4
0
4
Input Power - dBm
Pout (dBm)
Gain (dB)
PAE (%)
8
20
10
0
12
2.4
16
F = 10 GHz
2.2
15
2.0
14
1.8
13
1.6
12
1.4
11
1.2
10
1.0
0.8
0.6
0.4
5
9
8
7
6
10
15
20
25
30
35
40
45
50
Drain Current - mA
NF (dB) Vd = 3 V
NF (dB) Vd = 5 V
NF (dB) Vd = 8 V
Gain (dB) Vd = 3 V
Gain (dB) Vd = 5 V
Gain (dB) Vd = 8 V
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com
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