TGF4260_15 Datasheet, PDF (1/9 Pages) TriQuint Semiconductor – 9.6 mm Discrete HFET

Product Data Sheet
March 31, 2003
9.6 mm Discrete HFET
TGF4260-SCC
Key Features and Performance
• 9600 µm x 0.5 µm HFET
• Nominal Pout of 37dBm at 6 GHz
• Nominal Gain of 9.5dB at 6 GHz
• Nominal PAE of 52% at 6 GHz
• Frequency Range: DC - 10.5 GHz
• Suitable for high reliability applications
• 0.6 x 2.4 x 0.1 mm (0.024 x 0.093 x 0.004 in)
Primary Applications
• Cellular Base Stations
• High-reliability space
• Military
Description
The TriQuint TGF4260-SCC is a single gate 9.6 mm discrete GaAs Heterostructure
Field Effect Transistor (HFET) designed for high efficiency power applications up to
10.5 GHz in Class A and Class AB operation.
Typical performance at 6 GHz is 37dBm power output, 9.5 dB Gain, and 52% PAE.
Bond pad and backside metallization are gold plated for compatibility with eutectic
alloy attach methods as well as thermocompression and thermosonic wire bonding
processes.
The TGF4260-SCC is readily assembled using automatic equipment.
TriQuint Semiconductor Texas : [phone] Fax: [phone] Web: www.triquint.com
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