TGF4240_15 Datasheet, PDF (1/7 Pages) TriQuint Semiconductor – 2.4 mm Discrete HFET

Product Data Sheet
March 31, 2003
2.4 mm Discrete HFET
TGF4240-SCC
Key Features and Performance
• 2400 µm x 0.5 µm HFET
• Nominal Pout of 31.5 dBm at 8.5 GHz
• Nominal Gain of 10.0 dB at 8.5 GHz
• Nominal PAE of 56 % at 8.5 GHz
• Frequency Range: DC - 12 GHz
• Suitable for high reliability applications
• 0.6 x 1.0 x 0.1 mm (0.024 x 0.040 x 0.004 in)
Primary Applications
• Cellular Base Stations
• High-reliability space
• Military
DESCRIPTION
The TriQuint TGF4240-SCC is a single gate 2.4 mm Discrete GaAs Heterostructure
Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12
GHz in Class A and Class AB operation.
Typical performance at 8.5 GHz is 31.5 dBm power output, 10 dB Gain, and 56% PAE.
Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy
attach methods as well as thermocompression and thermosonic wire-bonding
processes.
The TGF4240-SCC is readily assembled using automatic equipment.
TriQuint Semiconductor Texas : [phone] Fax: [phone] Web: www.triquint.com
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