TGF4230 Datasheet, PDF (1/7 Pages) TriQuint Semiconductor – 1.2mm Discrete HFET

T R I Q U I N T S E M I C ON D U C TO R, I N C.
TGF4230-EEU
423 0 ^{1.2mmDiscrete HFET}
q ^{1200 µm X 0.5 µm HFET}
q ^{Nominal Pout of 28.5- dBm at 8.5- GHz}
q ^{Nominal Gain of 10.0- dB at 8.5- GHz}
q ^{Nominal PAE of 55% at 8.5 - GHz}
q ^{Suitable for High-Reliability Applications}
q ^{0,572 x 0,699 x 0,102 mm (0.023 x 0.028 x 0.004 in.)}
PHOTO ENLARGEMENT
DESCRIPTION
The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field
Ef fect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and
Class AB operation.
Bond - pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods
as well as thermocompression and thermosonic wire- bonding processes. The TGF4230-EEU is
readily assembled using automatic equipment.
TriQuint Semiconductor, Inc. • Texas Facilities • [phone] • www.triquint.com