TGF4230-SCC Datasheet, PDF (1/9 Pages) TriQuint Semiconductor – DC - 12 GHz Discrete HFET

Product Data Sheet
December 16, 2002
DC - 12 GHz Discrete HFET
TGF4230-SCC
Key Features and Performance
• Nominal Pout of 28.5 dBm at 8.5 GHz
• Nominal Gain of 10.0 dB at 8.5 GHz
• Nominal PAE of 55 % at 8.5 GHz
• 1200 µm HFET
• 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x
0.004 in)
• Bias at 8 Volts, 96 mA
Primary Applications
• Cellular Base Stations
• High dynamic-range LNAs
• Military and Space
Description
The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field
Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in
Class A and Class AB operation.
Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy
attach methods as well as thermocompression and thermosonic wire-bonding processes.
The TGF4230-SCC is readily assembled using automatic equipment.
For an Application Note on the use of HFETs, refer to the TriQuint website for the
Millimeter Wave Division.
TriQuint Semiconductor Texas : [phone] Fax: [phone] Web: www.triquint.com
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