TGF4112 Datasheet, PDF (1/9 Pages) TriQuint Semiconductor – 12 mm Discrete HFET

TGF4112-EPU
 4112 ^{12 mm Discrete HFET}
• 0.5 um gate finger length
• Nominal Pout of 6.0 Watts at 2.3 GHz
• Nominal PAE of 54.5% at 2.3 GHz
• Nominal Gain of 12.7 dB at 2.3 GHz
• Die size 36.0 x 81.0 x 4.0 mils
(0.914 x 2.057 x 0.102 mm)
TGF4112-EPU RF Performance at F = 2.3 GHz
Vd = 8.0 V, Vg = -1.3 V, Iq = 0.75 A and T _A = 25°C
46
55
Pout
44
PAE
50
42
45
40
40
38
35
36
30
34
25
32
20
30
15
28
10
26
5
14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
Input Power (dBm)
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