TGF3021-SM_15 Datasheet, PDF (1/33 Pages) TriQuint Semiconductor – 30W, 32V, 0.03 – 4 GHz, GaN RF Transistor

TGF3021-SM
30W, 32V, 0.03 – 4 GHz, GaN RF Transistor
Applications
• Military radar
• Civilian radar
• Land mobile and military radio communications
• Test instrumentation
• Wideband and narrowband amplifiers
• Jammers
Product Features
• Frequency: 0.03 to 4.0 GHz
• Output Power (P3dB): 36.0 W at 2 GHz
• Linear Gain: 19.3 dB at 2 GHz
• Typical PAE3dB: 72.7% at 2 GHz
• Operating Voltage: 32 V
• Low thermal resistance package
• CW and Pulse capable
• 3 x 4 mm package
General Description
The TriQuint TGF3021-SM is a 30 W (P3dB) discrete GaN
on SiC HEMT which operates from 0.03 to 4.0 GHz. The
device is constructed with TriQuint’s proven TQGaN25
process, which features advanced field plate techniques
to optimize power and efficiency at high drain bias
operating conditions. This optimization can potentially
lower system costs in terms of fewer amplifier line-ups
and lower thermal management costs.
The device is housed in an industry-standard 3 x 4 mm
surface mount QFN package.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Functional Block Diagram
20 19 18 17
1
16
2
15
3
14
4
13
5
12
6
11
7 8 9 10
Pin Configuration
Pin No.
11 - 16
1-6
7 – 10, 20 - 17
Back side
Label
VD / RF OUT
VG / RF IN
NC
Source
Ordering Information
Part
ECCN Description
TGF3021-SM
EAR99
QFN Packaged Part
TGF3021-SM-
EVB1
EAR99
0.03 – 0.512 GHz
EVB
Datasheet: Rev A 2-27-15
© 2015 TriQuint
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