TGF3020-SM_15 Datasheet, PDF (1/23 Pages) TriQuint Semiconductor – 5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor

Applications
• Telemetry
• C-band radar
• Communications
• Test instrumentation
• Wideband amplifiers
• 5.8GHz ISM
Product Features
• Frequency: 4.0 to 6.0 GHz
• Output Power (P3dB): 6.8 W at 5 GHz
• Linear Gain: 12.7 dB at 5 GHz
• Typical PAE3dB: 59.6% at 5 GHz
• Operating Voltage: 32 V
• Low thermal resistance package
• CW and Pulse capable
• 3 x 3 mm package
TGF3020-SM
5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor
Functional Block Diagram
General Description
The TriQuint TGF3020-SM is a 5W (P3dB), 50Ω-input
matched discrete GaN on SiC HEMT which operates
from 4.0 to 6.0 GHz. The integrated input matching
network enables wideband gain and power performance,
while the output can be matched on board to optimize
power and efficiency for any region within the band.
The device is housed in an industry-standard 3 x 3 mm
surface mount QFN package.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
10 - 11
2-3
Back side
Label
VD / RF OUT
VG / RF IN
Source
Ordering Information
Part
ECCN Description
TGF3020-SM
EAR99
QFN Packaged Part
TGF3020-SM-
EVB1
TGF3020-SM-
EVB2
EAR99
EAR99
5.3 – 5.9 GHz EVB
4 – 6 GHz EVB
Datasheet: Rev A 09-26-14
© 2014 TriQuint
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