TGF3015-SM_15 Datasheet, PDF (1/21 Pages) TriQuint Semiconductor – 10W, 32V, 0.03 – 3 GHz, GaN RF Input-Matched Transistor

TGF3015-SM
10W, 32V, 0.03 – 3 GHz, GaN RF Input-Matched Transistor
Applications
• Military radar
• Civilian radar
• Land mobile and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Product Features
• Frequency: 30 MHz to 3.0 GHz
• Output Power (P_3dB): 11 W at 2.4 GHz
• Linear Gain: 17.1 dB at 2.4 GHz
• Typical PAE_3dB: 62.7% at 2.4 GHz
• Operating Voltage: 32 V
• Low thermal resistance package
• CW and Pulse capable
• 3 x 3 mm package
Functional Block Diagram
General Description
The TriQuint TGF3015-SM is a 10W (P_3dB), 50Ω-input
matched discrete GaN on SiC HEMT which operates
from 30MHz to 3.0 GHz. The integrated input matching
network enables wideband gain and power performance,
while the output can be matched on board to optimize
power and efficiency for any region within the band.
The device is housed in an industry-standard 3 x 3 mm
package that saves real estate of already space-
constrained handheld radios.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
9 - 12
3
6
Back side
Label
V_D / RF OUT
V_G / RF IN
Off-chip Shunt Cap for Low-
Frequency Gain
Source
Ordering Information
Part
ECCN Description
TGF3015-SM
EAR99
QFN Packaged Part
TGF3015-SM-
EVB1
EAR99
0.5 – 3 GHz EVB
Datasheet: Rev A 08-12-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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