TGF2965-SM_15 Datasheet, PDF (1/23 Pages) TriQuint Semiconductor – 5W, 32V, 0.03 – 3 GHz, GaN RF Input-Matched Transistor

TGF2965-SM
5W, 32V, 0.03 – 3 GHz, GaN RF Input-Matched Transistor
Applications
• Military radar
• Civilian radar
• Land mobile and military radio communications
• Test instrumentation
• Wideband and narrowband amplifiers
• Jammers
Product Features
• Frequency: 0.03 to 3.0 GHz
• Output Power (P3dB): 6.0 W at 2 GHz
• Linear Gain: 18 dB at 2 GHz
• Typical PAE3dB: 63% at 2 GHz
• Operating Voltage: 32 V
• Low thermal resistance package
• CW and Pulse capable
• 3 x 3 mm package
Functional Block Diagram
General Description
The TriQuint TGF2965-SM is a 6W (P3dB), 50Ω-input
matched discrete GaN on SiC HEMT which operates from
0.03 to 3.0 GHz. The integrated input matching network
enables wideband gain and power performance, while the
output can be matched on board to optimize power and
efficiency for any region within the band.
The device is housed in an industry-standard 3 x 3 mm
surface mount QFN package.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
10 - 11
3
6
Back side
Label
VD / RF OUT
VG / RF IN
Off-chip shunt cap for low
frequency gain
Source
Ordering Information
Part
ECCN Description
TGF2965-SM
EAR99
QFN Packaged Part
TGF2965-SM-
EVB1
EAR99
0.03 – 3.0 GHz EVB
Datasheet: Rev A 12-11-14
© 2014 TriQuint
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