TGF2961-SD Datasheet, PDF (1/20 Pages) TriQuint Semiconductor – 1 Watt DC-4 GHz Packaged HFET

TGF2961-SD
1 Watt DC-4 GHz Packaged HFET
900 MHz Application Board
Performance
Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical
20
20
15
10
15
Gain
5
IRL
0
ORL
10
-5
-10
-15
5
-20
0.6 0.7 0.8 0.9 1 1.1 1.2
Frequency (GHz)
31
30
Key Features
• Frequency Range: DC-4 GHz
Nominal 900 MHz Application Board Performance:
• TOI: 44 dBm
• 31 dBm Psat, 30 dBm P1dB
• Gain: 18 dB
• Input Return Loss: -15 dB
• Output Return Loss: -7 dB
• Bias: Vd = 8 V, Id = 200 mA, Vg = -1.0 V
(Typical)
• Package Dimensions: 4.5 x 4 x 1.5 mm
Primary Applications
• Cellular Base Stations
• WiMAX
• Wireless Infrastructure
• IF & LO Buffer Applications
• RFID
Product Description
The TGF2961-SD is a high performance 1-watt
Heterojunction GaAs Field Effect Transistor
(HFET) housed in a low cost SOT89 surface
mount package.
The device’s ideal operating point is at a drain bias
of 8 V and 200 mA. At this bias at 900 MHz when
matched into 50 ohms using external components,
this device is capable of 18 dB of gain, 30 dBm of
saturated output power, and 44 dBm of output IP3
Evaluation boards at 900 MHz, 1900 MHz and
2100 MHz available on request.
RoHS and Lead-Free compliant
29
Freq (GHz)
Datasheet subject to change without notice.
1
TriQuint Semiconductor: www. triquint.com [phone] Fax [phone] [e-mail]
August 2007 © Rev A