TGF2960-SD_15 Datasheet, PDF (1/21 Pages) TriQuint Semiconductor – 0.5 Watt DC-5 GHz Packaged HFET

TGF2960-SD
0.5 Watt DC-5 GHz Packaged HFET
900 MHz Application Board
Performance
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
Key Features
• Frequency Range: DC-5 GHz
Nominal 900 MHz Application Board Performance:
• TOI: 40 dBm
• 28 dBm Psat, 27 dBm P1dB
• Gain: 19 dB
• Input Return Loss: -10 dB
• Output Return Loss: -5 dB
• Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V
(Typical)
• Package Dimensions: 4.5 x 4 x 1.5 mm
Primary Applications
• Cellular Base Stations
• WiMAX
• Wireless Infrastructure
• IF & LO Buffer Applications
• RFID
Product Description
The TGF2960-SD is a high performance 1/2-watt
Heterojunction GaAs Field Effect Transistor
(HFET) housed in a low cost SOT89 surface
mount package.
The device’s ideal operating point is at a drain bias
of 8 V and 100 mA. At this bias at 900 MHz when
matched into 50 ohms using external components,
this device is capable of 19 dB of gain, 28 dBm of
saturated output power, and 40 dBm of output IP3.
Evaluation boards at 900 MHz, 1900 MHz and
2100 MHz available on request.
RoHS and Lead-Free compliant.
Datasheet subject to change without notice.
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TriQuint Semiconductor: www. triquint.com [phone] Fax [phone] [e-mail]
May 2012 © Rev B