TGF2954_15 Datasheet, PDF (1/19 Pages) TriQuint Semiconductor – 27 Watt Discrete Power GaN on SiC HEMT

Applications
• Marine radar
• Satellite communications
• Point to point communications
• Military communications
• Broadband amplifiers
• High efficiency amplifiers
TGF2954
27 Watt Discrete Power GaN on SiC HEMT
Product Features
• Frequency Range: DC - 12 GHz
• 44.5 dBm Nominal PSAT at 3 GHz
• 71.6% Maximum PAE at 3 GHz
• 19.6 dB Nominal Power Gain at 3 GHz
• Bias: VD = 32 V, IDQ = 100 mA
• Technology: TQGaN25 on SiC
• Chip Dimensions: 1.01 x 1.68 x 0.10 mm
Functional Block Diagram
5-6
1-4
GND
General Description
The TriQuint TGF2954 is a discrete 5.04 mm GaN on
SiC HEMT which operates from DC-12 GHz. The
TGF2954 is designed using TriQuint’s proven TQGaN25
production process. This process features advanced
field plate techniques to optimize microwave power and
efficiency at high drain bias operating conditions.
Pad Configuration
Pad No.
1-4
5-6
Backside
Symbol
VG / RF IN
VD / RF OUT
Source / Ground
The TGF2954 typically provides 44.5 dBm of saturated
output power with power gain of 19.5 dB at 3 GHz. The
maximum power added efficiency is 71.5 % which makes
the TGF2954 appropriate for high efficiency applications.
Lead-free and RoHS compliant.
Ordering Information
Part
TGF2954
ECCN Description
3A001b.3.b 27 Watt GaN HEMT
Datasheet: Rev A 10-20-14
© 2014 TriQuint
- 1 of 19 -
Disclaimer: Subject to change without notice
www.triquint.com