TGF2952_15 Datasheet, PDF (1/22 Pages) TriQuint Semiconductor – 7 Watt Discrete Power GaN on SiC HEMT

Applications
• Marine radar
• Satellite communications
• Point to point communications
• Military communications
• Broadband amplifiers
• High efficiency amplifiers
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Product Features
• Frequency Range: DC - 14 GHz
• 38.4 dBm Nominal PSAT at 3 GHz
• 75.7% Maximum PAE at 3 GHz
• 20.4 dB Nominal Power Gain at 3 GHz
• Bias: VD = 32 V, IDQ = 25 mA
• Technology: TQGaN25 on SiC
• Chip Dimensions: 1.01 x 0.82 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2952 is a discrete 1.25 mm GaN on
SiC HEMT which operates from DC-14 GHz. The
TGF2952 is designed using TriQuint’s proven TQGaN25
production process. This process features advanced
field plate techniques to optimize microwave power and
efficiency at high drain bias operating conditions.
Pad Configuration
Pad No.
1
2
Backside
Symbol
VG / RF IN
VD / RF OUT
Source / Ground
The TGF2952 typically provides 38.4 dBm of saturated
output power with power gain of 20.4 dB at 3 GHz. The
maximum power added efficiency is 75.7 % which makes
the TGF2952 appropriate for high efficiency applications.
Lead-free and RoHS compliant.
Ordering Information
Part
TGF2952
ECCN
EAR99
Description
7 Watt GaN HEMT
Datasheet: Rev A 10-20-14
© 2014 TriQuint
- 1 of 22 -
Disclaimer: Subject to change without notice
www.triquint.com