TGF2929-FL_15 Datasheet, PDF (1/21 Pages) TriQuint Semiconductor – 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor

TGF2929-FL
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Product Features
• Frequency: DC to 3.5 GHz
• Output Power (P3dB): 107 W at 3.5 GHz
• Linear Gain: > 14 dB at 3.5 GHz
• Typical PAE: > 50% at 3.5 GHz
• Operating Voltage: 28 V
• Low thermal resistance package
Functional Block Diagram
General Description
The TriQuint TGF2929-FL is a 107 W (P3dB) discrete GaN
on SiC HEMT which operates from DC to 3.5 GHz. The
device is constructed with TriQuint’s proven TQGaN25HV
process, which features advanced field plate techniques
to optimize power and efficiency at high drain bias
operating conditions. This optimization can potentially
lower system costs in terms of fewer amplifier line-ups
and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
1
2
Flange
Label
VD / RF OUT
VG / RF IN
Source
Ordering Information
Part
TGF2929-FL
ECCN
EAR99
TGF2929-FL-EVB1 EAR99
Description
Packaged part
Flangeless
3.1-3.5 GHz
Evaluation Board
Datasheet: Rev A - 12-11-14
© 2014 TriQuint
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