TGF2819-FS_15 Datasheet, PDF (1/21 Pages) TriQuint Semiconductor – 100W Peak Power, 20W Average Power

TGF2819-FS
100W Peak Power, 20W Average Power,
32V, DC – 3.5 GHz, GaN RF Power Transistor
Applications
 Military radar
 Civilian radar
 Professional and military radio communications
 Test instrumentation
 Wideband or narrowband amplifiers
 Jammers
Product Features
 Frequency: DC to 3.5 GHz
 Output Power (P3dB): 126 W Peak
(25 Watts Avg.) at 3.3 GHz
 Linear Gain: >14 dB at 3.3 GHz
 Typical PAE: > 58% at 3.3 GHz
 Operating Voltage: 32 V
 Low thermal resistance package
Functional Block Diagram
General Description
The TriQuint TGF2819-FS is a greater-than 100 W Peak
(20 W Avg.) (P3dB) discrete GaN on SiC HEMT which
operates from DC to 3.5 GHz. The device is constructed
with TriQuint’s proven TQGaN25HV process, which
features advanced field plate techniques to optimize
power and efficiency at high drain bias operating
conditions. This optimization can potentially lower
system costs in terms of fewer amplifier line-ups and
lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
1
2
Flange
Label
VD / RF OUT
VG / RF IN
Source
Ordering Information
Part
ECCN Description
TGF2819-FS
3A001.b.3.a
Packaged part
Flangeless
TGF2819-FS-EVB1 EAR99
3.1-3.5 GHz
Evaluation Board
Datasheet: Rev B- 03-03-15
© 2014 TriQuint
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