TGF2160_15 Datasheet, PDF (1/6 Pages) TriQuint Semiconductor – 1600um Discrete GaAs pHEMT

Applications
 Defense & Aerospace
 High-Reliability
 Test and Measurement
 Commercial
 Broadband Wireless
TGF2160
1600um Discrete GaAs pHEMT
Product Features
 Frequency Range: DC - 20 GHz
 32.5 dBm Typical Output Power - P1dB
 10.4 dB Typical Gain @ 12 GHz
 63% Typical PAE @ 12 GHz
 No Vias
 Technology: 0.25 um GaAs pHEMT
 Chip Dimensions: 0.41 x 0.54 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2160 is a discrete 1600-Micron pHEMT
which operates from DC to 20 GHz. The TGF2160 is
designed using TriQuint’s proven standard 0.25um
power pHEMT production process. This process
features advanced techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
The TGF2160 typically provides 32.5 dBm of output
power at P1dB with gain of 10.4 dB and 63% power-
added efficiency at 1 dB compression. This
performance makes the TGF2160 appropriate for high
efficiency applications. The protective overcoat layer
with silicon nitride provides a level of environmental
robustness and scratch protection.
Lead-free and RoHS compliant.
Pad Configuration
Pad Dimensions
G (71um X 71um)
D (71um X 71um)
S (96um X 71um)
S (96um X 106um)
Terminals
Gate
Drain
Source (outermost)
Source (center)
Ordering Information
Part
TGF2160
ECCN
EAR99
Description
1600um GaAs pHEMT
Datasheet: Rev A 06-23-13
© 2013 TriQuint
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