TGF2120 Datasheet, PDF (1/6 Pages) TriQuint Semiconductor – 1200um Discrete GaAs pHEMT

Applications
 Defense & Aerospace
 High-Reliability
 Test and Measurement
 Commercial
 Broadband Wireless
TGF2120
1200um Discrete GaAs pHEMT
Product Features
 Frequency Range: DC - 20 GHz
 31 dBm Typical Output Power - P1dB
 11 dB Typical Gain @ 12 GHz
 57% Typical PAE @ 12 GHz
 No Vias
 Technology: 0.25 um GaAs pHEMT
 Chip Dimensions: 0.41 x 0.54 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2120 is a discrete 1200-Micron pHEMT
which operates from DC to 20 GHz. The TGF2120 is
designed using TriQuint’s proven standard 0.25um
power pHEMT production process. This process
features advanced techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
The TGF2120 typically provides 31 dBm of output power
at P1dB with gain of 11 dB and 57% power-added
efficiency at 1 dB compression. This performance
makes the TGF2120 appropriate for high efficiency
applications. The protective overcoat layer with silicon
nitride provides a level of environmental robustness and
scratch protection.
Lead-free and RoHS compliant.
Pad Configuration
Pad Dimensions
G (71um X 71um)
D (71um X 71um)
S (113.8um X 71um)
S (113.8um X 106um)
Terminals
Gate
Drain
Source (outermost)
Source (center)
Ordering Information
Part
TGF2120
ECCN
EAR99
Description
1200um GaAs pHEMT
Datasheet: Rev A 06-13-13
© 2013 TriQuint
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