TGF2080_15 Datasheet, PDF (1/6 Pages) TriQuint Semiconductor – 800um Discrete GaAs pHEMT

Applications
 Defense & Aerospace
 High-Reliability
 Test and Measurement
 Commercial
 Broadband Wireless
TGF2080
800um Discrete GaAs pHEMT
Product Features
 Frequency Range: DC - 20 GHz
 29.5 dBm Typical Output Power - P1dB
 11.5 dB Typical Gain @ 12 GHz
 56% Typical PAE @ 12 GHz
 No Vias
 Technology: 0.25 um GaAs pHEMT
 Chip Dimensions: 0.41 x 0.54 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2080 is a discrete 800-Micron pHEMT
which operates from DC to 20 GHz. The TGF2080 is
designed using TriQuint’s proven standard 0.25um
power pHEMT production process. This process
features advanced techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
The TGF2080 typically provides 29.5 dBm of output
power at P1dB with gain of 11.5 dB and 56% power-
added efficiency at 1 dB compression. This
performance makes the TGF2080 appropriate for high
efficiency applications. The protective overcoat layer
with silicon nitride provides a level of environmental
robustness and scratch protection.
Lead-free and RoHS compliant.
Pad Configuration
Pad Dimensions
G (71um X 71um)
D (71um X 71um)
S (121um X 71um)
S (121um X 96um)
Terminals
Gate
Drain
Source (outermost)
Source (center)
Ordering Information
Part
TGF2080
ECCN
EAR99
Description
800um GaAs pHEMT
Datasheet: Rev B 06-26-13
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