TGF2025_15 Datasheet, PDF (1/8 Pages) TriQuint Semiconductor – 250 um Discrete GaAs pHEMT

Applications
• Defense & Aerospace
• High-Reliability
• Test and Measurement
• Commercial
• Broadband Wireless
TGF2025
250 um Discrete GaAs pHEMT
Product Features
• Frequency Range: DC - 20 GHz
• 24 dBm Typical Output Power - P1dB
• 14 dB Typical Gain at 12 GHz
• 58% Typical PAE at 12 GHz
• 0.9 dB Typical NF at12 GHz
• No Vias
• Technology: 0.25 um GaAs pHEMT
• Chip Dimensions: 0.41 x 0.34 x 0.10 mm
Functional Block Diagram
Drain
Gate
Source
General Description
The TriQuint TGF2025 is a discrete 250 micron pHEMT
which operates from DC to 20 GHz. The TGF2025 is
fabricated using TriQuint’s proven standard 0.25 um
power pHEMT production process. This process
features advanced techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
The TGF2025 typically provides 24 dBm of output power
at P1dB with gain of 14 dB and 58% power-added
efficiency at 1 dB compression. This performance
makes the TGF2025 appropriate for high efficiency
applications. The protective overcoat layer with silicon
nitride provides a level of environmental robustness and
scratch protection.
The TGF2025 is lead-free and RoHS compliant.
Pad Configuration
Pad Dimensions
G (71um X 71um)
D (71um X 71um)
S (121um X 71um)
Terminals
Gate
Drain
Source
Ordering Information
Part
TGF2025
ECCN
EAR99
Description
250 um GaAs pHEMT
Datasheet: Rev. D 11-04-13
© 2013 TriQuint
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