TGF2023-20_15 Datasheet, PDF (1/9 Pages) TriQuint Semiconductor – 90 Watt Discrete Power GaNon SiCHEMT

TGF2023-20
90 Watt Discrete Power GaN on SiC HEMT
Key Features
• Frequency Range: DC - 18 GHz
• 49.6 dBm Nominal Psat at 3 GHz
• 52% Maximum PAE
• 17.5 dB Nominal Power Gain
• Bias: Vd = 28 - 32 V, Idq = 2 A, Vg = -3.6 V Typical
• Technology: 0.25 um Power GaN on SiC
• Chip Dimensions: 0.82 x 4.56 x 0.10 mm
Primary Applications
• Defense & Aerospace
• Broadband Wireless
Bias conditions: Vd = 28 V, Idq = 2 A, Vg = -3.6 V Typical
Product Description
The TriQuint TGF2023-20 is a discrete 20 mm
GaN on SiC HEMT which operates from DC-18
GHz. The TGF2023-20 is designed using
TriQuint’s proven 0.25um GaN production process.
This process features advanced field plate
techniques to optimize microwave power and
efficiency at high drain bias operating conditions.
The TGF2023-20 typically provides 49.6 dBm of
saturated output power with power gain of 17.5 dB
at 3 GHz. The maximum power added efficiency is
52% which makes the TGF2023-20 appropriate for
high efficiency applications.
Lead-free and RoHS compliant
.
Datasheet subject to change without notice.
1
TriQuint Semiconductor: www. triquint.com [phone] Fax [phone] [e-mail]
Apr 2011 © Rev D