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TGF2023-2-10_15 Datasheet, PDF (1/14 Pages) TriQuint Semiconductor – 50 Watt Discrete Power GaN on SiC HEMT | |||
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Applications
⢠Defense & Aerospace
⢠Broadband Wireless
TGF2023-2-10
50 Watt Discrete Power GaN on SiC HEMT
Product Features
⢠Frequency Range: DC - 18 GHz
⢠47.3 dBm Nominal PSAT at 3 GHz
⢠69.5% Maximum PAE
⢠19.8 dB Nominal Power Gain at 3 GHz
⢠Bias: VD = 12 - 32 V, IDQ = 200 - 1000 mA
⢠Technology: TQGaN25 on SiC
⢠Chip Dimensions: 0.82 x 2.48 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2023-2-10 is a discrete 10 mm GaN
on SiC HEMT which operates from DC-18 GHz. The
TGF2023-2-10 is designed using TriQuintâs proven
TQGaN25 production process. This process features
advanced field plate techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
The TGF2023-2-10 typically provides 47.4 dBm of
saturated output power with power gain of 19.8 dB at 3
GHz. The maximum power added efficiency is 69.5 %
which makes the TGF2023-2-10 appropriate for high
efficiency applications.
Lead-free and RoHS compliant
Pad Configuration
Pad No.
1-8
9
Backside
Symbol
VG / RF IN
VD / RF OUT
Source / Ground
Datasheet: Rev C 09-27-13
© 2013 TriQuint
Ordering Information
Part
ECCN Description
TGF2023-2-10 3A001b.3.b 50 Watt GaN HEMT
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Disclaimer: Subject to change without notice
www.triquint.com
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