TGF2023-2-05_15 Datasheet, PDF (1/19 Pages) TriQuint Semiconductor – 25 Watt Discrete Power GaN on SiC HEMT

Applications
• Defense & Aerospace
• Broadband Wireless
TGF2023-2-05
25 Watt Discrete Power GaN on SiC HEMT
Product Features
• Frequency Range: DC - 18 GHz
• 43 dBm Nominal P_SAT at 3 GHz
• 78.3% Maximum PAE
• 18 dB Nominal Power Gain at 3 GHz
• Bias: V_D = 12 - 32 V, I_DQ = 100 - 500 mA
• Technology: TQGaN25 on SiC
• Chip Dimensions: 0.82 x 1.44 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2023-2-05 is a discrete 5 mm GaN on
SiC HEMT which operates from DC-18 GHz. The
TGF2023-2-05 is designed using TriQuint’s proven
TQGaN25 production process. This process features
advanced field plate techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
Pad Configuration
Pad No.
1-4
5
Backside
Symbol
V_G / RF IN
V_D / RF OUT
Source / Ground
The TGF2023-2-05 typically provides 43.0 dBm of
saturated output power with power gain of 18 dB at
3 GHz. The maximum power added efficiency is
78.3 % which makes the TGF2023-2-05 appropriate for
high efficiency applications.
Lead-free and RoHS compliant
Ordering Information
Part
ECCN Description
TGF2023-2-05 3A001b.3.b 25 Watt GaN HEMT
Datasheet: Rev C 9-27-13
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