TGF2023-2-02_15 Datasheet, PDF (1/14 Pages) TriQuint Semiconductor – 12 Watt Discrete Power GaN on SiC HEMT

Applications
• Defense & Aerospace
• Broadband Wireless
TGF2023-2-02
12 Watt Discrete Power GaN on SiC HEMT
Product Features
• Frequency Range: DC - 18 GHz
• 40.1 dBm Nominal P_SAT at 3 GHz
• 73.3% Maximum PAE
• 21 dB Nominal Power Gain at 3 GHz
• Bias: V_D = 12 - 32 V, I_DQ = 50 - 250 mA
• Technology: TQGaN25 on SiC
• Chip Dimensions: 0.82 x 0.92 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2023-2-02 is a discrete 2.5 mm GaN
on SiC HEMT which operates from DC-18 GHz. The
TGF2023-2-02 is designed using TriQuint’s proven
TQGaN25 production process. This process features
advanced field plate techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
Pad Configuration
Pad No.
1-2
3
Backside
Symbol
V_G / RF IN
V_D / RF OUT
Source / Ground
The TGF2023-2-02 typically provides 40.1 dBm of
saturated output power with power gain of 21 dB at
3 GHz. The maximum power added efficiency is
73.3 % which makes the TGF2023-2-02 appropriate for
high efficiency applications.
Lead-free and RoHS compliant
Ordering Information
Part
ECCN Description
TGF2023-2-02 EAR99
12 Watt GaN HEMT
Datasheet: Rev C 09-27-13
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