TGF2023-02_15 Datasheet, PDF (1/9 Pages) TriQuint Semiconductor – 12 Watt Discrete Power GaN on SiC HEMT

TGF2023-02
12 Watt Discrete Power GaN on SiC HEMT
Key Features
• Frequency Range: DC - 18 GHz
• 41 dBm Nominal Psat at 3 GHz
• 58% Maximum PAE
• 18 dB Nominal Power Gain
• Bias: Vd = 28 - 32 V, Idq = 250 mA, Vg = -3.6 V
Typical
• Technology: 0.25 um Power GaN on SiC
• Chip Dimensions: 0.82 x 0.92 x 0.10 mm
Bias conditions: Vd = 28 V, Idq = 250 mA, Vg = -3.6 V Typical
Primary Applications
• Defense & Aerospace
• Broadband Wireless
Product Description
The TriQuint TGF2023-02 is a discrete 2.5 mm
GaN on SiC HEMT which operates from DC-18
GHz. The TGF2023-02 is designed using
TriQuint’s proven 0.25um GaN production process.
This process features advanced field plate
techniques to optimize microwave power and
efficiency at high drain bias operating conditions.
The TGF2023-02 typically provides 41 dBm of
saturated output power with power gain of 18dB at
3 GHz. The maximum power added efficiency is
58% which makes the TGF2023-02 appropriate for
high efficiency applications.
Lead-free and RoHS compliant
.
Datasheet subject to change without notice.
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Apr 2011 © Rev D