TGF2023-01 Datasheet, PDF (1/8 Pages) TriQuint Semiconductor – 6 Watt Discrete Power GaN on SiC HEMT

TGF2023-01
6 Watt Discrete Power GaN on SiC HEMT
Key Features
• Frequency Range: DC - 18 GHz
• > 38 dBm Nominal Psat
• 55% Maximum PAE
• 15 dB Nominal Power Gain
• Bias: Vd = 28 - 40 V, Idq = 125 mA, Vg = -3 V
Typical
• Technology: 0.25 um Power GaN on SiC
• Chip Dimensions: 0.82 x 0.66 x 0.10 mm
Measured Performance
Bias conditions: Vd = 28 - 40 V, Idq = 125 mA, Vg = -3 V Typical
Primary Applications
• Space
• Military
• Broadband Wireless
Product Description
The TriQuint TGF2023-01 is a discrete 1.25 mm
GaN on SiC HEMT which operates from DC-18
GHz. The TGF2023-01 is designed using
TriQuint’s proven 0.25um GaN production process.
This process features advanced field plate
techniques to optimize microwave power and
efficiency at high drain bias operating conditions.
The TGF2023-01 typically provides > 38 dBm of
saturated output power with power gain of 15 dB.
The maximum power added efficiency is 55%
which makes the TGF2023-01 appropriate for high
efficiency applications.
Lead-free and RoHS compliant
.
Datasheet subject to change without notice.
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TriQuint Semiconductor: www. triquint.com [phone] Fax [phone] [e-mail]
Dec 2008 © Rev A