TGF2022-60 Datasheet, PDF (1/8 Pages) TriQuint Semiconductor – DC - 20 GHz Discrete power pHEMT

Advance Product Information
September 19, 2005
DC - 20 GHz Discrete power pHEMT
TGF2022-60
Product Description
The TriQuint TGF2022-60 is a discrete
6.0 mm pHEMT which operates from
DC-20 GHz. The TGF2022-60 is
designed using TriQuint’s proven
standard 0.35um power pHEMT
production process.
The TGF2022-60 typically provides
> 38 dBm of saturated output power
with power gain of 12 dB. The The
maximum power added efficiency is
57% which makes the TGF2022-60
appropriate for high efficiency
applications.
The TGF2022-60 is also ideally suited
for Point-to-point Radio, High-reliability
space, and Military applications.
The TGF2022-60 has a protective
surface passivation layer providing
environmental robustness.
Key Features and Performance
• Frequency Range: DC - 20 GHz
• > 38 dBm Nominal Psat
• 57% Maximum PAE
• 12 dB Nominal Power Gain
• Suitable for high reliability applications
• 6.0mm x 0.35um Power pHEMT
• Nominal Bias Vd = 8-12V, Idq = 448-752mA
(Under RF Drive, Id rises from 448mA to 1480mA)
• Chip Dimensions: 0.57 x 2.93 x 0.10 mm
(0.022 x 0.115 x 0.004 in)
Primary Applications
• Point-to-point Radio
• High-reliability space
• Military
• Base Stations
• Broadband Wireless Applications
35
30
25
20
15
10
5
0
0
MSG
MAG
2
4
6
8
10 12 14 16
Frequency (GHz)
Lead-free and RoHS compliant
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
1
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