TGF2022-48 Datasheet, PDF (1/8 Pages) TriQuint Semiconductor – DC - 20 GHz Discrete power pHEMT

Advance Product Information
September 19, 2005
DC - 20 GHz Discrete power pHEMT
TGF2022-48
Product Description
The TriQuint TGF2022-48 is a discrete
4.8 mm pHEMT which operates from
DC-20 GHz. The TGF2022-48 is
designed using TriQuint’s proven
standard 0.35um power pHEMT
production process.
The TGF2022-48 typically provides
> 37 dBm of saturated output power with
power gain of 13 dB. The maximum
power added efficiency is 58% which
makes the TGF2022-48 appropriate for
high efficiency applications.
The TGF2022-48 is also ideally suited for
Point-to-point Radio, High-reliability
space, and Military applications.
The TGF2022-48 has a protective
surface passivation layer providing
environmental robustness.
Key Features and Performance
• Frequency Range: DC - 20 GHz
• > 37 dBm Nominal Psat
• 58% Maximum PAE
• 45 dBm Nominal OIP3
• 13 dB Nominal Power Gain
• Suitable for high reliability applications
• 4.8mm x 0.35 m Power pHEMT
• Nominal Bias Vd = 8-12V, Idq = 360-600mA
(Under RF Drive, Id rises from 360mA to 1200mA)
• Chip Dimensions: 0.57 x 2.42 x 0.10 mm
(0.022 x 0.095 x 0.004 in)
Primary Applications
• Point-to-point Radio
• High-reliability space
• Military
• Base Stations
• Broadband Wireless Applications
35
30
25
20
15
10
5
0
0
MSG
MAG
2
4
6
8
10 12 14 16
Frequency (GHz)
Lead-free and RoHS compliant
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
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