TGF2021-12 Datasheet, PDF (1/8 Pages) TriQuint Semiconductor – DC - 12 GHz Discrete power pHEMT

Advance Product Information
September 19, 2005
DC - 12 GHz Discrete power pHEMT
TGF2021-12
Key Features and Performance
• Frequency Range: DC - 12 GHz
• > 42 dBm Nominal Psat
• 58% Maximum PAE
• 11 dB Nominal Power Gain
• Suitable for high reliability applications
• 12mm x 0.35 m Power pHEMT
• Nominal Bias Vd = 8-12V, Idq = 900-1500mA
(Under RF Drive, Id rises from 900mA to 2560mA)
• Chip Dimensions: 0.57 x 2.93 x 0.10 mm
(0.022 x 0.115 x 0.004 in)
Product Description
The TriQuint TGF2021-12 is a discrete 12
mm pHEMT which operates from DC-12
GHz. The TGF2021-12 is designed using
TriQuint’s proven standard 0.35um power
pHEMT production process.
The TGF2021-12 typically provides
42 dBm of saturated output power with
power gain of 11 dB. The maximum power
added efficiency is 59% which makes the
TGF2021-12 appropriate for high efficiency
applications.
The TGF2021-12 is also ideally suited for
Point-to-point Radio, High-reliability space,
and Military applications.
The TGF2021-has a protective surface
passivation layer providing environmental
robustness.
Lead-free and RoHS compliant
Primary Applications
• Point-to-point Radio
• High-reliability space
• Military
• Base Stations
• Broadband Wireless Applications
35
30
25
MSG
20
15
MAG
10
5
0
0
2
4
6
8
10 12 14 16
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
1
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