TGF1350_15 Datasheet, PDF (1/7 Pages) TriQuint Semiconductor – Discrete MESFET

Discrete MESFET
Product Data Sheet
February 1, 2002
TGF1350-SCC
Key Features and Performance
• 0.5 um x 300 um FET
• 1.5 dB Noise Figure with 11dB Associated
Gain at 10 GHz
• 2.5 dB Noise Figure with 7 dB Associated
Gain at 18 GHz
• All-Gold Metallization for High Reliability
• Recessed Gate Structure
• 0.620 x 0.514 x 0.102 mm (0.024 x 0.020 x
0.004 in.)
Description
The TriQuint TGF1350-SCC is a single-gate GaAs field-effect transistor (FET) used
for low-noise applications DC to 18 GHz. Bond pad is gold plated for compatibility
with thermocompression and thermosonic compatibility wire-bonding processes.
The TGF1350-SCC is readily assembled using automated equipment. Die attach
should be accomplished with conductive epoxy only. Eutectic attach is not
recommended .
TriQuint Semiconductor Texas : [phone] Fax: [phone] Web: www.triquint.com
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