TGA9070 Datasheet, PDF (1/7 Pages) TriQuint Semiconductor – 23 - 29 GHz High Power Amplifier

Product Datasheet
23 - 29 GHz High Power Amplifier
TGA9070-SCC
Description
Key Features and Performance
• 0.25um pHEMT Technology
• 23 GHz - 29 GHz Frequency Range
• Nominal 1 Watt (28GHz) @ P1dB
• Nominal Gain of 23 dB
• Bias 7V @ 400 mA
• Chip Dimensions 4.1mm x 3.0mm
Primary Applications
• LMDS
• Point-to-Point Radio
The TriQuint TGA9070-SCC is a three stage
HPA MMIC design using TriQuint’s proven
0.25 um Power pHEMT process to support
a variety of millimeter wave applications
including point-to-point digital radio, LMDS/LMCS
and Ka-band satellite spacecraft and ground
terminals.
The three stage design consists of a 400 um input
device driving a pair of 600 um interstage devices
followed by four 600 um output devices.
The TGA9070 provides greater than 1W of
output power across 23-29 GHz with a typical
PAE of 35%. Typical small signal gain is 23 dB.
The TGA9070 requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance compliance.
The device is available in chip form.
TriQuint Semiconductor Texas : [phone] Fax [phone] Web: www.triquint.com
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